Improved Silicon Solar Cell Fabrication

Description:

Princeton Docket No. 09-2565/2664-1

          Researchers at Princeton have developed a new method of fabrication of silicon solar cells that enhances efficiency.  Princeton is currently seeking an industrial partner to commercialize this technology.

 

Minority carrier recombination at silicon surfaces and metal contacts greatly reduces the efficiency of photovoltaic devices.  Princeton has demonstrated the use of an organic compound and method that provides a novel way to passivate the defects at silicon surfaces.  The method does not use any exotic materials and employs known laboratory methods.

 

It is anticipated that this process will provide a route for low-cost passivation of a silicon surface, as well as a route towards wide-bandgap heterojunction on silicon and wide-band contacts, and a low cost high quality p-n junction on silicon.

 

          Patent protection is pending.

Patent Information:
For Information, Contact:
William Gowen
Licensing Associate
Princeton University
 
Inventors:
Sushobhan Avasthi
Jeffrey Schwartz
James Sturm
Keywords: